激光、光学与光子学杂志

Defect reduction of GaN growing on dome-shaped patterned sapphire substrates - Cheng Yen Chien - Graduate Institute of Electronics Engineering

Abstract

Cheng Yen Chien

Defect reduction is usually a crucial topic for the researches of epitaxy improvement. Commercial dome-shaped patterned-sapphire substrates (CDPSS) had been designed to tackle this problem during the epitaxy of gallium nitride (GaN), and that they did reduce the density of defect considerably. So as to reveal the veiled mechanism of defect reduction, we had executed Raman scattering and X-ray diffraction (XRD) measurements on various samples with different growth time to verify the behaviour of defects during epitaxy 1. The results of etch pits density (EPD) had been included, too.