电气与电子系统杂志

Two-dimensional Tungsten Diselenide Field-effect Transistors Using Multi-layer Palladium Diselenide as a Contact Material

Abstract

Luca Rossi

This article delves into the promising realm of Two-Dimensional Tungsten Diselenide (2D-WSe2) Field-Effect Transistors (FETs), particularly focusing on the utilization of Multi-Layer Palladium Diselenide (ML-PdSe2) as a contact material. The investigation explores the significance, challenges, and advancements in this field, encompassing the properties of 2D-WSe2, the role of contact materials in FET performance, and the potential of ML-PdSe2. Through an extensive literature review and critical analysis, this article aims to elucidate the current state-of-the-art, highlight key findings, and provide insights into future directions for research and development in 2D-WSe2 FETs employing ML-PdSe2 contacts.